Study of Dual Gate Mosfet over Digital Application | Original Article

ABSTRACT:

This paper is dedicated to a thorough investigation of the dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) and its potential digital-age applications. The dual gate metal- oxidesemiconductor field-effect transistor (MOSFET) is a voltage-controlled dual material gate (DMG) structure that may boost the efficiency, performance, and functionality of electronic circuits in the nanotechnology, microprocessor, wireless communication, etc. industries. Dual gate MOSFET has the ability to enhance digital application capabilities in the present revolutionary era. The exact circuit performance of a dual gate MOSFET may be examined digitally, revealing its unique properties. This may have far-reaching consequences for the digital world in terms of power use, power efficiency, memory chip density, switching speed, etc. Using features technology, we may circumvent transistor loss due to load settings and other things. By switching to a dual-gate MOSFET, we were able to fix the issue and boost the circuit performance beyond that of a single-gate CMOS design. PSPICE simulation software was used to get these findings, and the Equivalent circuit approach was used to analyze the properties and performance of the dual gate MOSFET. Take into account the fact that attributes might vary depending on context. Trans capacitance as a function of gate voltage, threshold voltage as a function of lateral straggle parameter and temperature, mobile charge density as a function of temperature, etc., are some examples of the behaviors of parameters that are examined. When compared to earlier theoretical research, the outcome gained with digital application is easier to grasp