Article Details

A study the basic structure of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with its symbols | Original Article

Ritu Kaundilya*, in Journal of Advances and Scholarly Researches in Allied Education | Multidisciplinary Academic Research


The bipolar junction transistor (BJT) is similarly to the metal-oxide semiconductor field-effect transistor (MOSFET) in that it is a three-terminal semiconductor device with many different uses. In the design of integrated circuits (ICs), which contain whole circuits manufactured on a single silicon chip, the MOSFET has become by far the most extensively used electronic device. Silicon (Si) technology is used in CMOS processes since it is the most developed of the semiconductor technologies. In addition to being the most inexpensive semiconductor material, silicon also has the advantage of being widely available. The addition of a small number of impurity atoms can alter its characteristics. Most power MOSFETs prevent the parasitic bipolar transistor from turning on by shorting the N+ source P-body junction through the source metallization.