Short Channel Effects In Nanoscale Fully Depleted Double-Gate Soi Mosfets

Published in Journal

Journal of Advances in Science and Technology [JAST] (Vol:5/ Issue: 10) DOI: 10.29070/JAST
Authors: Meenakshi Gupta, Dr. K. L. Jaat,
Subjects: Science & Technology

Year: Aug, 2013
Volume: 5 / Issue: 10
Pages: 0 - 0 (0)
Publisher: Ignited Minds Journals
Source:
E-ISSN: 2230-9659
DOI:
Published URL: http://ipublisher.in/p/2194
Published On: Aug, 2013

Article Details

Short Channel Effects In Nanoscale Fully Depleted Double-Gate Soi Mosfets |

Meenakshi Gupta, Dr. K. L. Jaat, in Journal of Advances in Science and Technology | Science & Technology

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ABSTRACT:

In this paper is discussed how the short channel behaviorin sub 100nm channel range can be improved by inducing a step Surface potentialprofile at the back gate of anasymmetrical double gate (DG) silicon-on –insulator (SOI) metal-oxide –semiconductor field-effect-transistor (MOSFET) in which the front gate consists of two materials with different workfunction.’