This Paper Is Dedicated to a Thorough Investigation of the Dual-Gate Metal-Oxide-Semiconductor
Field-Effect Transistor (Mosfet) and Its Potential Digital-Age Applications. the Dual Gate Metal- Oxidesemiconductor
Field-Effect Transistor (Mosfet) Is a Voltage-Controlled Dual Material Gate (Dmg) Structure
That May Boost the Efficiency, Performance, and Functionality of Electronic Circuits In The
Nanotechnology, Microprocessor, Wireless Communication, Etc. Industries.
Dual Gate Mosfet Has the Ability to Enhance Digital Application Capabilities In the Present Revolutionary
Era. the Exact Circuit Performance of a Dual Gate Mosfet May Be Examined Digitally, Revealing Its Unique
Properties. This May Have Far-Reaching Consequences For the Digital World In Terms of Power Use, Power
Efficiency, Memory Chip Density, Switching Speed, Etc. Using Features Technology, We May Circumvent
Transistor Loss Due to Load Settings and Other Things. By Switching to a Dual-Gate Mosfet, We Were Able To
Fix the Issue and Boost the Circuit Performance Beyond That of a Single-Gate Cmos Design.
Pspice Simulation Software Was Used to Get These Findings, and the Equivalent Circuit Approach Was Used
To Analyze the Properties and Performance of the Dual Gate Mosfet. Take into Account the Fact That
Attributes Might Vary Depending on Context. Trans Capacitance As a Function of Gate Voltage, Threshold
Voltage As a Function of Lateral Straggle Parameter and Temperature, Mobile Charge Density As a Function
Of Temper ...