In This Paper Is Discussed How the Short Channel Behaviorin Sub 100Nm Channel Range Can Be Improved By Inducing a Step Surface Potentialprofile at the Back Gate of Anasymmetrical Double Gate (Dg) Silicon-On –Insulator (Soi) Metal-Oxide –Semiconductor Field-Effect-Transistor (Mosfet) In Which the Front Gate Consists of Two Materials With Different Workfunction.’