A Review About Cmos Technology Procedure to Development Connected With Ultra-Wideband Low Noise Amplifier

Published in Journal

Journal of Advances in Science and Technology [JAST] (Vol:4/ Issue: 8) DOI: 10.29070/JAST
Authors: Vinay Kumar,
Subjects: Science & Technology

Year: Feb, 2013
Volume: 4 / Issue: 8
Pages: 0 - 0 (0)
Publisher: Ignited Minds Journals
Source:
E-ISSN: 2230-9659
DOI:
Published URL: http://ipublisher.in/I/a/2013
Published On: Feb, 2013

Article Details

A Review About Cmos Technology Procedure to Development Connected With Ultra-Wideband Low Noise Amplifier |

Vinay Kumar, in Journal of Advances in Science and Technology | Science & Technology

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ABSTRACT:

This paper presents the configuration of ultra-widebandlow noise amplifier (UWB LNA). The proposed UWB LNA whose transfer speedbroadens from 2.5 Ghz to 16 Ghz is planned utilizing a symmetric 3d Rf mixedinductor. This UWB LNA has an addition of 11 ± 1.0 db and a Nf less than 3.3db. Great data and yield impedance matching and exceptional confinement areaccomplished over the working recurrence band. The proposed UWB LNA isdetermined from a 1.8 V supply. The UWB LNA is composed and recreated instandard TSMC 0.18 CMOSengineering procedure.